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Descr: . Electronic Components Datasheets Active components Transistors ST stb7nk80z_stb7nk80z-1_stp7nk80zfp_stp7nk80z.pdf
Group:Electronics > Components > Transistors
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STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESHTM Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP7NK80Z 800V < 1.8 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8 5.2A STB7NK80Z-1 800V < 1.8 5.2A Extremely high dv/dt capability 100% avalanche tested 3 3 12 1 Gate charge minimized D2PAK I2PAK Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Applications D(2) Switching application Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established G(1) strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary S(3) MDmeshTM products. AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STB7NK80ZT4 B7NK80Z D

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